IGBT串联用的有源电压控制技术

5 结论

通过以上实验结果和分析，表明了有源电压控制技术是实现IGBT可靠串联的一种良好的方案。另一方面，在较高工作频率下，采用低耐压器件串联比采用单只高耐压器件具有多种好处，包括低损耗、低成本、高冗余度等。考虑到在目前的技术条件下，单个IGBT器件的耐压值再继续提高难度很大，所以能够实现IGBT器件可靠串联的有缘电压控制技术具有广泛的应用空间。

[附录]

Ps即Pswitching，是单个IGBT的开关损耗：Pswitching=( Eon+ Eoff)*f

Pc即Pconduction，是单个IGBT的导通损耗：

Pconduction=VCE,on*Ic*D

其中D为占空比，设定为50%，则平均的Pconduction应为：

Pconduction=VCE,on*Ic*0.5

Pts即Ptotal,single，是单个IGBT的总功率损耗：Ptotal=Pswitching+ Pconduction

Pt即Ptotal，是串、并联后每个方案中IGBT的

总功率损耗：

Ptotal=Ptotal,single*N

其中N是串、并联个数。

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